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£±. Li Xiaolong, Lu Wu*, Ma Wuying, et.al, Use of Temperature-Switching Approach to Evaluate the ELDRS, RADECS 2016, in Bremen, Germany

2. Xin Wang, Wu Lu* Wu-Ying Ma, et.al, Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure CHIN. PHYS. LETT. 2016,33(8): 086101-1-3

3. Mo-Han Liu, Wu Lu*, Wu-Ying Ma, et.al, Total ionizing dose e?ects of domestic SiGe HBTs under di?erent dose rates, Chinese Physics C 2016,40(3): 036003-1-5

4. Wu Xue, Lu Wu*, Li Yudong, et.al, TID effect in 12-bit 125 MSPS Pipe-Line Analog-to-Digital Converter. Journal of Senmiconductors. 2014, 35(4):044008-1-5.

5.WU Xue, LU Wu* Wang Xin ,et.al, Influence of channel length and layout on TID for 0.18μm NMOS transistors, NUCLEAR SCIENCE AND TECHNIQUES, 2013,24(6): 060202-1-6

6.Deng Wei, Lu Wu* ,Guo Qi, et.al,“An Accelerated Evaluation Method for ELDRS of Bipolar Linear Regulators Using Ladder Temperature Irradiation Experiment”, 2013 IEEE NSS/MIC/RTSD, in Seoul, Korea.

7.Zheng Yuzhan Lu Wu* Ren Diyuan, “Accelerated Evaluating the ELDRS of Bipolar Operational Amplifiers by Using Temperature Swithing Approach”,RADECS 2013, in Oxford, UK,

8.Wang Xin£¬Lu Wu*, Guo Qi£¬et.al£¬Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters£¬Journal of Semiconductors£¬2013, 34(12):124006-1-7.

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