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1. L. iao, J. Wang, S. Tang, Z. Shuai, X. Yin, J. Shen, A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor, IEEE Transactions on Power Electronics, 2016.2. ÌÆÈü£¬Íõ¿¡£¬ÉòÕ÷£¬Áõ½­¡£ÐÂÐÍ̼»¯¹èË«¼«½áÐ;§Ìå¹Ü×ÔÊÊÓ¦Çý¶¯µç·£¬µçÁ¦µç×Ó¼¼Êõ£¬2016, 50£¨6£©.3. J. Wang, S. Xu, J. Korec, ¡°Power MOSFET with Integrated Gate Resistor and Diode-Connected MOSFET¡±, United States Patent **.4. J. Korec, S. Xu, J. Wang, B. Yang, ¡°Capacitors and Methods of Forming¡±, United States Patent **.5. Y. Du, J. Wang, G. Wang, A. Q. Huang, "Modeling of the High-Frequency Rectifier With 10-kV SiC JBS Diodes in High-Voltage Series Resonant Type DC-DC Converters", IEEE Transactions on Power Electronics, vol. 29, no. 8, August 2014, pp.4288-4300. 6. B. Yang, J. Wang, S. Xu, J. Korec, Z. Shen, "Advanced Low-Voltage Power MOSFET Technology for Power Supply in Package Applications", IEEE Transactions on Power Electronics, vol. 28, no. 9, September 2013, pp.4202-4215. 7. J. Wang, A. Q. Huang, W. Sung, Y. Liu, B. J. Baliga, ¡°Smart grid technologies,¡± IEEE Industrial Electronics Magazine, vol. 2, no. 2, Jun. 2009, pp. 16-23. 8. J. Wang, A. Q. Huang, ¡°Design and Characterization of High Voltage Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),¡± IEEE Transaction on Power Electronics, vol. 24, no. 5, May 2009, pp. 1189-1197. 9. J. Wang, T. Zhao, A. Q. Huang, R. Callanan, A. Agarwal, ¡°Characterization, Modeling and Application of 10 kV SiC MOSFET,¡± IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1798-1806, Aug. 2008. 10. J. Wang, A. Q. Huang, S. Atcitty, I. Gyuk, ¡°Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),¡± International Journal of Power Management Electronics, Volume 2008, Article ID 891027, 5 pages, 2008.11. J. Wang, J. Li, T. Zhao, A. Q. Huang, R. Callanan, F. Husna, A. Agarwal, ¡°10 kV SiC MOSFET Based Boost Converter,¡± IEEE Transaction on Industry Applications, vol. 45, no. 6, pp. 2056-2063, September, 2009. 12. J. Wang, D. Zhao, Y. Sun, Wang, S. Zhang, H. Yang, S. Zhou and M. Wu, ¡°Thermal annealing behavior of Pt on n-GaN Schottky contacts,¡± JOURNAL OF PHYSICS D: APPLIED PHYSICS, Vol. 36, 2003, pp. 1018-1022. 13. J. Wang, D. Zhao, Z. Liu, G. Feng, J. Zhu, X. Shen, B. Zhang and H. Yang, ¡°Metal-semiconductor-metal ultraviolet photodetector based on GaN,¡± Science in China (Series G), Vol. 46, No. 2, 2003, pp. 198-203.14. Q. Zhang, J. Wang, A. Agarwal, J. Palmour, A. Q. Huang, et al., ¡°Design and Characterization of High Voltage 4H-SiC p-IGBTs,¡± IEEE Transactions on Electron Devices, vol. 55, No. 8, Aug. 2008, pp. 1912-1919.

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