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£¨1£©Haiou Li£¨ÀŸ£©, Yue Li, Gongli Xiao, Xi Gao, Qi Li, Yonghe Chen, Tao Fu, Tangyou Sun, Fabi Zhang*, and Naisen Yu*, Simple Fabrication ZnO/¦Â-Ga2O3 Core/Shell Nanorod Arrays and Their Photoresponse Properties, Optical Materials Express, 2018, 8(4):794-803£¨2£©Xi Gao, Leena Singh, Wanli Yang, Jingjing Zheng, Haiou Li*£¨ÀŸ£© & Weili Zhang, Bandwidth broadening of a linear polarization converter by near-field metasurface coupling, Scientific Reports, 2017, 7(1): 1-8£¨3£©XI GAO, WANLI YANG, WEIPING CAO, MING CHEN, YANNAN JIANG, XINHUA YU, AND HAIOU LI*£¨ÀŸ£©, Bandwidth broadening of a graphene-based circular polarization converter by phase compensation, OPTICS EXPRESS, 2017, 25(20): 23945-23954£¨4£©Weihua Kang, Xiaodong Zhang, Xian Ji, Yong Cai, Jiahui Zhou, Wenjun Xu, Qi Li, Gongli Xiao, Baoshun Zhang and Haiou Li*£¨ÀŸ£©, Fabrication of 45-nm high In component metamorphic In0.7Ga0.3As/In0.6Ga0.4As composite channel HEMTs on GaAs substrates, Electronics Letters, 2016, 52(4): 318-319£¨5£©Xiao-fengWu£¬Shi-gang Hu£¬H.O. Li*£¨ÀŸ£©, Jin Li£¬Zai-fang Xi£¬Ying-lu Hu, A Kind of Coating Method of GaN-MOCVD Graphite Susceptor£¬Journal of nanomaterials, 2015, 24(3): 037203-037206£¨6£©WU XiaoFeng£¬LIU HongXia£¬ H.O. Li*£¨ÀŸ£©£¬LI Qi£¬HU ShiGang£¬XI ZaiFang£¬ ZHAO Jin, Fabrication of 150-nm Al0.48In0.52As/Ga0.47In0.53As HEMTs on GaAs substrates£¬SCIENCE CHINA Physics, Mechanics & Astronomy, 2012, 55(12): 2389-2391£¨7£©Ming Li, H.O. Li£¨ÀŸ£©, Chak Wah Tang, and Kei May Lau*, S. Lawrence Zipursky*, Fabrication of 100-nm Metermorphic AlInAs/GaInAs HEMTs on Si Substrate by MOCVD,IEEE ELECTRON DEVICE LETTERS, 2012, 33(4): 498-500£¨8£©HaiOu LI£¨ÀŸ£©, HUANG Wei*, LI QiLI SiMin, JIANG Xi, TANG ChakWah, LAU KeiMay, Fabrication of 0.3-¦Ìm T-gate Metamorphic AlInAs/GaInAs HEMTs on Silicon Substrates Using Metal Organic Chemical Vapor Deposition, SCIENCE CHINA Physics, Mechanics & Astronomy, 2012, 55(4): 644-648£¨9£©H.O. Li£¨ÀŸ£©, Zhihong Feng£¬C.W. Tang, K.J. Chen, and K.M. Lau*, Fabrication of 150-nm T-Gate Metamorphic AlInAs/ GaInAs HEMTs on GaAs Substrates by MOCVD, IEEE ELECTRON DEVICE LETTERS, 2011, 32(9):1224-1226£¨10£©H.O. Li£¨ÀŸ£©, C.W. Tang, K.J. Chen, and K.M. Lau*, Metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD, IEEE ELECTRON DEVICE LETTERS, 2008, 29(6):561-564 1. ¹ãÎ÷×ÔÈ»¿Æѧ»ù½ðÏîÄ¿£¨Öص㣩,³£¹ØÐÍGaN¹¦ÂÊÆ÷¼þÖƱ¸ºÍÄ£ÐÍÑо¿(2016GXNSFDA380021,2016.09- 2020.082.¹ú¼Ò×ÔÈ»¿Æѧ»ù½ðÃæÉÏÏîÄ¿£¬**£¬¹è³Äµ×ÉÏIII-V×åÒìÖʽá²ÄÁÏÉú³¤»úÖƺÍHEMTÆ÷¼þÖƱ¸£¬2015/01-2018/12£¬89ÍòÔª£¬ÔÚÑУ¬Ö÷³Ö3.¹ãÎ÷µÚÊ®°ËÅú¡°ÐÂÊÀ¼ÍÊ®°ÙǧÈ˲Ź¤³Ì¡±µÚ¶þ²ã´ÎÈËÑ¡£¬2015Ä꣬µç×Ó¿ÆѧÓë¼¼Êõ4.¹ú¼Ò×ÔÈ»¿Æѧ»ù½ðÃæÉÏÏîÄ¿£¬**£¬¹è»ùGaN HEMTs ³¬¼¶½áÆ÷¼þ¼°ÆäÄ£ÐÍÑо¿£¬2013/01-2016/12£¬86ÍòÔª£¬ÒѽáÌ⣬Ö÷³Ö5.Öйú²©Ê¿ºó¿Æѧ»ù½ðί£¨Ìرð×ÊÖú£©,¹è»ù¸ßǨÒÆÂÊIII-V×å°ëµ¼Ìå²ÄÁϺÍÆ÷¼þÑо¿£¨2013T60566£©,2013.06-2014.05 6.½ÌÓý²¿¡°ÐÂÊÀ¼ÍÓÅÐãÈ˲ÅÖ§³Ö¼Æ»®¡±»ñµÃÕߣ¬2013Ä꣬µç×Ó¿ÆѧÓë¼¼Êõ

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