öλÔÓéÀֵǼÈë¿ÚÏÂÔØ

µ¼Ê¦ÐÕÃû£ººîÖлª
ÐÔ±ð£ºÄÐ
ÈËÆøÖ¸Êý£º928

ËùÊôԺУ£º´óÁ¬Àí¹¤´óѧ
ËùÊôԺϵ£ºÊýѧ¿ÆѧѧԺ
Ö°³Æ£º½ÌÊÚ
µ¼Ê¦ÀàÐÍ£ºË¶µ¼/²©µ¼
ÕÐÉúöλÔÓéÀֵǼÈë¿ÚÏÂÔØ£º»ù´¡Êýѧ
Ñо¿ÁìÓò£º ΢·Ö¼¸ºÎѧ£¬ÀèÂü¿Õ¼äºÍãÉ¿É·ò˹»ù¿Õ¼äµÄ×ÓÁ÷ÐÎÀíÂÛ¡£
Ñо¿ÁìÓò£º ΢·Ö¼¸ºÎѧ£¬ÀèÂü¿Õ¼äºÍãÉ¿É·ò˹»ù¿Õ¼äµÄ×ÓÁ÷ÐÎÀíÂÛ¡£ [ÊÕÆð]




ͨѶ·½Ê½ :
µç×ÓÓʼþ£ºzhonghua@dlut.edu.cn


¸öÈ˼òÊö :
»Æ»ðÁÖ£¬ÏÖÈδóÁ¬Àí¹¤´óѧÎïÀíÓë¹âµç¹¤³ÌѧԺ¸±½ÌÊÚ£¬Ë¶Ê¿Éúµ¼Ê¦¡£2016ÄêÈëÑ¡´óÁ¬ÊÐÇàÄê¿Æ¼¼Ö®ÐÇ¡£2006Äê±¾¿ÆºÍ2011Ä격ʿ±ÏÒµÓÚÏÃÃÅ´óѧÎïÀíϵ£¬Ê¦´Ó°ëµ¼Ìå̽²âÆ÷ÁìÓòר¼ÒÎâÕýÔƽÌÊÚ£¬´ÓʶþÑõ»¯îѺÍ̼»¯¹èµÈ¿í½û´ø°ëµ¼Ìå²ÄÁÏÉú³¤ºÍ×ÏÍâ¹âµç̽²âÆ÷µÄÑÐÖƹ¤×÷¡£2011Äê8ÔÂÖÁ2014Äê10ÔÂÔÚмÓƹúÁ¢´óѧ£¨NUS£©µç»ú¹¤³Ìϵ£¨ECE£©´Óʲ©ºóÑо¿¹¤×÷£¬ºÏ×÷µ¼Ê¦ÎªY.C.Liang½ÌÊÚ£¬²©ºóÆڼ为Ôð´øÁì¶àÃû²©Ê¿Éú¿ªÕ¹¡¶¸ßѹ¸ß¹¦Âʹè³Äµ×µª»¯ïزÄÁϹ¦Âʵç×ÓÆ÷¼þ¼¼ÊõÑз¢¡·ÏîÄ¿£¨750WÈËÃñ±Ò£©¡£¸ÃÏîÄ¿µäÐͳɹûÊÇ»ñµÃ+5VãÐÖµµçѹºÍ³¬¹ý1200V»÷´©µçѹÐÔÄܵij£¹ØÐ͹¦ÂÊÆ÷¼þ£¬ÒÔ¼°»ùÓÚÎÞ½ð£¨Au-free£©¹¤ÒÕ¼¼ÊõµÄ+2VãÐÖµµçѹºÍ600V»÷´©µçѹµÄ³£¹ØÐ͹¦ÂÊÆ÷¼þ£¬ÏîÄ¿Ö¸±ê´ïµ½Í¬ÆÚ¹ú¼ÊÏȽøˮƽ¡£Ä¿Ç°Ö÷Òª´Óʵª»¯ïØ»ù²ÄÁÏÍâÑÓÉú³¤ºÍµç×ÓÆ÷¼þµÄÑÐÖƹ¤×÷£¬ÖÁ½ñÒÑÔÚIEEEElectronDeviceLetters¡¢IEEETransactionsonPowerElectronicsµÈÖØҪѧÊõÆÚ¿¯ºÍ¹ú¼Ê»áÒéÉÏ·¢±íѧÊõÂÛÎÄÊýʮƪ¡£

Ö÷³Ö¿ÎÌ⣺
1¡¢»ùÓÚ×ÝÏò¶ÌÕ¤¼«¹µµÀ½á¹¹µÄµÍµ¼Í¨µç×è³£¹ØÐÍGaN»ùHEMTÆ÷¼þÖƱ¸Ñо¿£¨¹ú¼Ò×ÔÈ»¿Æѧ»ù½ðÏîÄ¿£©
2¡¢¶àÖØ2DEG¹µµÀºÍ°¼²ÛÕ¤×éºÏGaNMOS-HEMTÆ÷¼þµÄÑÐÖÆ£¨°²»ÕÊ¡×ÔÈ»¿ÆѧÑо¿ÖØ´óÏîÄ¿£©
3¡¢µÍµ¼Í¨µç×è´óãÐÖµµçѹ³£¹ØÐÍAlGaN/GaN»ùHEMTÆ÷¼þÖƱ¸Ñо¿£¨ÁÉÄþÊ¡½ÌÓýÌüÏîÄ¿£©
4¡¢³£¹ØÐÍGaN»ù¹¦ÂÊÆ÷¼þµÄ·ÂÕæÓëÖÆ×÷£¨ÖÐÑë¸ßУ»ù±¾¿ÆÑÐÒµÎñ¾­·Ñ--Òý½øÈ˲ÅרÏ

´ú±íÐÔÂÛÎÄ£º
[1]HuolinHuangandY.C.Liang,"Formationofcombinedpartiallyrecessedandmultiplefluorinated-dielectriclayersgatestructuresforhighthresholdvoltageGaN-basedHEMTpowerdevices",Solid-StateElectronics114,148-154(2015).
[2]HuolinHuang,YungC.Liang,GaneshS.Samudra,Ting-FuChang,andChih-FangHuang,¡°EffectsofGateFieldPlatesontheSurfaceStateRelatedCurrentCollapseinAlGaN/GaNHEMTs¡±,IEEETrans.PowerElectron.29,2164-2173(2014).
[3]HuolinHuang,YungC.Liang,GaneshS.Samudra,andCassandraLowLeeNgo,¡°Au-FreeNormally-offAlGaN/GaN-on-SiMIS-HEMTsusingCombinedPartiallyRecessedandFluorinatedTrap-ChargeGateStructures¡±,IEEEElectronDeviceLett.35,569(2014).
[4]HuolinHuang,YannanXie,ZhifengZhang,FengZhang,QiangXu,ZhengyunWu,¡°GrowthandfabricationofsputteredTiO2basedultravioletdetectors¡±,Appl.Surf.Sci.293,248-254(2014).
[5]HuolinHuang,YannanXie,WeifengYang,FengZhang,JiafaCai,andZhengyunWu,¡°Low-Dark-CurrentTiO2MSMUVPhotodetectorswithPtSchottkyContacts¡±,IEEEElectronDeviceLett.32,530(2011).
[6]HuolinHuang,WeifengYang,YannanXie,XiapingChen,andZhengyunWu,¡°Metal-semiconductor-metalultravioletphotodetectorsbasedonTiO2filmsdepositedbyradiofrequencymagnetronsputtering¡±,IEEEElectronDeviceLett.31,588(2010).
[7]HuolinHuang,ZhonghaoSun,etal.,"Performance-ImprovedNormally-offAlGaN/GaNHigh-ElectronMobilityTransistorswithaDesignedp-GaNAreaundertheRecessedGate",13thIEEEInternationalConferenceonSolid-StateandIntegratedCircuitTechnology,2016,October25-28,Hangzhou,China.
[8]HuolinHuang,Yun-HsiangWang,YungC.Liang,GaneshS.Samudra,HongweiLiang,XiaochuanXia,andGuotongDu,"FormationofGateStructurebyMultipleFluorinatedDielectricLayersonPartiallyRecessedBarrierforHighThresholdVoltageAlGaN/GaNPowerHEMTs",11thInternationalConferenceonNitrideSemiconductors(ICNS-11),2015,August30-September4,Beijing,China.
[9]HuolinHuang,Yun-HsiangWang,YungC.Liang,GaneshS.Samudra,Chih-FangHuang,andWei-HungKuo,¡°5VHighThresholdVoltageNormally-offMIS-HEMTswithCombinedPartiallyRecessedandMultipleFluorinated-DielectricLayersGateStructures¡±,46thSSDM2014,September8-11,2014,Ibaraki,Japan.
[10]HuolinHuang,YungC.Liang,GaneshS.Samudra,andChih-FangHuang,¡°DesignofNovelNormally-offAlGaN/GaNHEMTswithCombinedGateRecessandFloatingChargeStructures¡±,IEEEPEDS2013,April22-25,2013,Kitakyushu,Japan.
[11]HuolinHuang,YungC.Liang,andGaneshS.Samudra,¡°TheoreticalCalculationandEfficientSimulationsofPowerSemiconductorAlGaN/GaNHEMTs¡±,IEEEEDSSC2012,December3-5,2012,ChulalongkornUniversity,Bangkok,Thailand.
[12]HuolinHuang,YungC.Liang,GaneshS.Samudra,YulingLi,andYee-ChiaYeo,¡°ModellingandSimulationsonCurrentCollapseinAlGaN/GaNPowerHEMTs¡±,SISPAD2012,September5-7,2012,Denver,CO,USA.

ÉêÇëºÍÊÚȨ·¢Ã÷רÀû£º
[1]¾ßÓÐ×ÝÏòÕ¤¼«½á¹¹µÄ³£¹ØÐÍHEMTÆ÷¼þ¼°ÆäÖƱ¸·½·¨
[2]¾ßÓÐÈýÃ÷ÖÎÕ¤¼«½éÖʽṹµÄHEMTÆ÷¼þ¼°ÆäÖƱ¸·½·¨
[3]Ò»ÖÖ×ÝÏò¶Ì¿ªÆôÕ¤¼«¹µµÀÐÍHEMTÆ÷¼þ¼°ÆäÖƱ¸·½·¨
[4]¸ßµç×ÓǨÒÆÂʾ§Ìå¹ÜÖÆ×÷·½·¨
[5]Ò»ÖÖ¶þÑõ»¯îÑ×ÏÍâ¹âµç̽²âÆ÷µÄÖƱ¸·½·¨

¿ÆÑй¤×÷ :
»Æ»ðÁÖ£¬ÏÖÈδóÁ¬Àí¹¤´óѧÎïÀíÓë¹âµç¹¤³ÌѧԺ¸±½ÌÊÚ£¬Ë¶Ê¿Éúµ¼Ê¦¡£2016ÄêÈëÑ¡´óÁ¬ÊÐÇàÄê¿Æ¼¼Ö®ÐÇ¡£2006Äê±¾¿ÆºÍ2011Ä격ʿ±ÏÒµÓÚÏÃÃÅ´óѧÎïÀíϵ£¬Ê¦´Ó°ëµ¼Ìå̽²âÆ÷ÁìÓòר¼ÒÎâÕýÔƽÌÊÚ£¬´ÓʶþÑõ»¯îѺÍ̼»¯¹èµÈ¿í½û´ø°ëµ¼Ìå²ÄÁÏÉú³¤ºÍ×ÏÍâ¹âµç̽²âÆ÷µÄÑÐÖƹ¤×÷¡£2011Äê8ÔÂÖÁ2014Äê10ÔÂÔÚмÓƹúÁ¢´óѧ£¨NUS£©µç»ú¹¤³Ìϵ£¨ECE£©´Óʲ©ºóÑо¿¹¤×÷£¬ºÏ×÷µ¼Ê¦ÎªY.C.Liang½ÌÊÚ£¬²©ºóÆڼ为Ôð´øÁì¶àÃû²©Ê¿Éú¿ªÕ¹¡¶¸ßѹ¸ß¹¦Âʹè³Äµ×µª»¯ïزÄÁϹ¦Âʵç×ÓÆ÷¼þ¼¼ÊõÑз¢¡·ÏîÄ¿£¨750WÈËÃñ±Ò£©¡£¸ÃÏîÄ¿µäÐͳɹûÊÇ»ñµÃ+5VãÐÖµµçѹºÍ³¬¹ý1200V»÷´©µçѹÐÔÄܵij£¹ØÐ͹¦ÂÊÆ÷¼þ£¬ÒÔ¼°»ùÓÚÎÞ½ð£¨Au-free£©¹¤ÒÕ¼¼ÊõµÄ+2VãÐÖµµçѹºÍ600V»÷´©µçѹµÄ³£¹ØÐ͹¦ÂÊÆ÷¼þ£¬ÏîÄ¿Ö¸±ê´ïµ½Í¬ÆÚ¹ú¼ÊÏȽøˮƽ¡£Ä¿Ç°Ö÷Òª´Óʵª»¯ïØ»ù²ÄÁÏÍâÑÓÉú³¤ºÍµç×ÓÆ÷¼þµÄÑÐÖƹ¤×÷£¬ÖÁ½ñÒÑÔÚIEEEElectronDeviceLetters¡¢IEEETransactionsonPowerElectronicsµÈÖØҪѧÊõÆÚ¿¯ºÍ¹ú¼Ê»áÒéÉÏ·¢±íѧÊõÂÛÎÄÊýʮƪ¡£

Ö÷³Ö¿ÎÌ⣺
1¡¢»ùÓÚ×ÝÏò¶ÌÕ¤¼«¹µµÀ½á¹¹µÄµÍµ¼Í¨µç×è³£¹ØÐÍGaN»ùHEMTÆ÷¼þÖƱ¸Ñо¿£¨¹ú¼Ò×ÔÈ»¿Æѧ»ù½ðÏîÄ¿£©
2¡¢¶àÖØ2DEG¹µµÀºÍ°¼²ÛÕ¤×éºÏGaNMOS-HEMTÆ÷¼þµÄÑÐÖÆ£¨°²»ÕÊ¡×ÔÈ»¿ÆѧÑо¿ÖØ´óÏîÄ¿£©
3¡¢µÍµ¼Í¨µç×è´óãÐÖµµçѹ³£¹ØÐÍAlGaN/GaN»ùHEMTÆ÷¼þÖƱ¸Ñо¿£¨ÁÉÄþÊ¡½ÌÓýÌüÏîÄ¿£©
4¡¢³£¹ØÐÍGaN»ù¹¦ÂÊÆ÷¼þµÄ·ÂÕæÓëÖÆ×÷£¨ÖÐÑë¸ßУ»ù±¾¿ÆÑÐÒµÎñ¾­·Ñ--Òý½øÈ˲ÅרÏ

´ú±íÐÔÂÛÎÄ£º
[1]HuolinHuangandY.C.Liang,"Formationofcombinedpartiallyrecessedandmultiplefluorinated-dielectriclayersgatestructuresforhighthresholdvoltageGaN-basedHEMTpowerdevices",Solid-StateElectronics114,148-154(2015).
[2]HuolinHuang,YungC.Liang,GaneshS.Samudra,Ting-FuChang,andChih-FangHuang,¡°EffectsofGateFieldPlatesontheSurfaceStateRelatedCurrentCollapseinAlGaN/GaNHEMTs¡±,IEEETrans.PowerElectron.29,2164-2173(2014).
[3]HuolinHuang,YungC.Liang,GaneshS.Samudra,andCassandraLowLeeNgo,¡°Au-FreeNormally-offAlGaN/GaN-on-SiMIS-HEMTsusingCombinedPartiallyRecessedandFluorinatedTrap-ChargeGateStructures¡±,IEEEElectronDeviceLett.35,569(2014).
[4]HuolinHuang,YannanXie,ZhifengZhang,FengZhang,QiangXu,ZhengyunWu,¡°GrowthandfabricationofsputteredTiO2basedultravioletdetectors¡±,Appl.Surf.Sci.293,248-254(2014).
[5]HuolinHuang,YannanXie,WeifengYang,FengZhang,JiafaCai,andZhengyunWu,¡°Low-Dark-CurrentTiO2MSMUVPhotodetectorswithPtSchottkyContacts¡±,IEEEElectronDeviceLett.32,530(2011).
[6]HuolinHuang,WeifengYang,YannanXie,XiapingChen,andZhengyunWu,¡°Metal-semiconductor-metalultravioletphotodetectorsbasedonTiO2filmsdepositedbyradiofrequencymagnetronsputtering¡±,IEEEElectronDeviceLett.31,588(2010).
[7]HuolinHuang,ZhonghaoSun,etal.,"Performance-ImprovedNormally-offAlGaN/GaNHigh-ElectronMobilityTransistorswithaDesignedp-GaNAreaundertheRecessedGate",13thIEEEInternationalConferenceonSolid-StateandIntegratedCircuitTechnology,2016,October25-28,Hangzhou,China.
[8]HuolinHuang,Yun-HsiangWang,YungC.Liang,GaneshS.Samudra,HongweiLiang,XiaochuanXia,andGuotongDu,"FormationofGateStructurebyMultipleFluorinatedDielectricLayersonPartiallyRecessedBarrierforHighThresholdVoltageAlGaN/GaNPowerHEMTs",11thInternationalConferenceonNitrideSemiconductors(ICNS-11),2015,August30-September4,Beijing,China.
[9]HuolinHuang,Yun-HsiangWang,YungC.Liang,GaneshS.Samudra,Chih-FangHuang,andWei-HungKuo,¡°5VHighThresholdVoltageNormally-offMIS-HEMTswithCombinedPartiallyRecessedandMultipleFluorinated-DielectricLayersGateStructures¡±,46thSSDM2014,September8-11,2014,Ibaraki,Japan.
[10]HuolinHuang,YungC.Liang,GaneshS.Samudra,andChih-FangHuang,¡°DesignofNovelNormally-offAlGaN/GaNHEMTswithCombinedGateRecessandFloatingChargeStructures¡±,IEEEPEDS2013,April22-25,2013,Kitakyushu,Japan.
[11]HuolinHuang,YungC.Liang,andGaneshS.Samudra,¡°TheoreticalCalculationandEfficientSimulationsofPowerSemiconductorAlGaN/GaNHEMTs¡±,IEEEEDSSC2012,December3-5,2012,ChulalongkornUniversity,Bangkok,Thailand.
[12]HuolinHuang,YungC.Liang,GaneshS.Samudra,YulingLi,andYee-ChiaYeo,¡°ModellingandSimulationsonCurrentCollapseinAlGaN/GaNPowerHEMTs¡±,SISPAD2012,September5-7,2012,Denver,CO,USA.

ÉêÇëºÍÊÚȨ·¢Ã÷רÀû£º
[1]¾ßÓÐ×ÝÏòÕ¤¼«½á¹¹µÄ³£¹ØÐÍHEMTÆ÷¼þ¼°ÆäÖƱ¸·½·¨
[2]¾ßÓÐÈýÃ÷ÖÎÕ¤¼«½éÖʽṹµÄHEMTÆ÷¼þ¼°ÆäÖƱ¸·½·¨
[3]Ò»ÖÖ×ÝÏò¶Ì¿ªÆôÕ¤¼«¹µµÀÐÍHEMTÆ÷¼þ¼°ÆäÖƱ¸·½·¨
[4]¸ßµç×ÓǨÒÆÂʾ§Ìå¹ÜÖÆ×÷·½·¨
[5]Ò»ÖÖ¶þÑõ»¯îÑ×ÏÍâ¹âµç̽²âÆ÷µÄÖƱ¸·½·¨

½ÌÓý±³¾° :
1993.9--1998.3
ÈÕ±¾¶«¾©¹¤Òµ´óѧ Î¢·Ö¼¸ºÎ ²©Ê¿